| PART |
Description |
Maker |
| NIC9N05TS1 |
Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection
|
ON Semiconductor
|
| NID9N05CL NID9N05CLT4 NID9N05CLT4G |
Power MOSFET
Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level(9 A, 52V?昏??靛钩锛???????MOSFET)
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
|
ON Semiconductor
|
| STP80NS04Z |
N - CHANNEL CLAMPED 7.5mOhm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
N - CHANNEL CLAMPED 7.5mohm - 80A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
http://
|
| STW130NS04ZB06 STP130NS04ZB STB130NS04ZB STB130NS0 |
N-channel clamped - 7 mOHM - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay TM MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| BUK9120-48TC |
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(甯?俯搴??搴??????????OS?充??靛??昏??靛钩?烘?搴??)
PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes(带温度感应二极管的功率MOS钳位电压逻辑电平场效应管) 52 A, 40 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| MGP20N14CL-D |
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
ON Semiconductor
|
| MGP20N35CL |
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
|
